Scanning Tunneling Microscopy of Si Donors in GaAs

Spin-polarized tunneling with GaAs tips in scanning tunneling microscopy.

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Scanning tunneling microscopy and spectroscopy of semi-insulating GaAs

N. D. Jäger, Ph. Ebert, K. Urban, R. Krause-Rehberg, and E. R. Weber Institut für Festkörperforschung, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany Fachbereich Physik, Martin-Luther-Universität Halle, 06099 Halle, Germany Department of Materials Science, University of California, and Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 ~Received ...

Cross-sectional scanning tunneling microscopy of epitaxial GaAs structures

The scanning tunneling microscope is used to study GaAs epitaxial structures, cleaved in ultrahigh vacuum, and viewed in cross section. Two applications are described: in the first, the net donor concentration in Si-doped GaAs is deduced by direct measurement of the depletion width at pn junctions. In the vicinity of the pn junctions, net donor concentrations of greater than 2X 10 cm3 are obser...

Scanning-tunneling-microscopy study of Pb on Si(111).

This Article is brought to you for free and open access by the Electrical & Computer Engineering at ODU Digital Commons. It has been accepted for inclusion in Electrical & Computer Engineering Faculty Publications by an authorized administrator of ODU Digital Commons. For more information, please contact [email protected]. Repository Citation Tang, D.; Elsayed-Ali, H. E.; Wendelken, J.; an...

Microscopy, Scanning Tunneling